type bss225 sipmos ? small-signal-transistor feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 0.09 a t a =70 c 0.073 pulsed drain current i d,pulse t a =25 c 0.36 reverse diode d v /d t d v /d t i d =0.09 a, v ds =480 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1a power dissipation p tot t a =25 c 1.00 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value v ds 1) 600 v r ds(on),max 45 i d 0.09 a product summary sot89 type package pb-free tape and reel information marking bss225 sot89 yes l6327: 3000pcs/reel kd rev. 1.23 page 1 2011-03-08
bss225 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - minimal footprint r thja - - 125 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage 1) v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds =0 v, i d =94 a 1.3 1.9 2.3 drain-source leakage current i d (off) v ds =600 v, v gs =0 v, t j =25 c - - 0.1 a v ds =600 v, v gs =0 v, t j =150 c --5 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =0.09 a -3045 v gs =10 v, i d =0.09 a -2845 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.075 a 0.05 0.14 - s 1) v ds is zero-hour rated, see note at p.8 values rev. 1.23 page 2 2011-03-08
bss225 parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 99 131 pf output capacitance c oss - 7.6 11 reverse transfer capacitance c rss - 3.1 4.4 turn-on delay time t d(on) - 14.0 20.0 ns rise time t r - 38.0 57.0 turn-off delay time t d(off) - 62.0 93 fall time t f - 41.0 62 gate charge characteristics gate to source charge q gs - 0.32 0.43 nc gate to drain charge q gd - 1.4 2.1 gate charge total q g - 3.9 5.8 gate plateau voltage v plateau - 3.3 - v reverse diode diode continous forward current i s - - 0.09 a diode pulse current i s,pulse - - 0.36 diode forward voltage v sd v gs =0 v, i f =0.09 a, t j =25 c - 0.75 1.2 v reverse recovery time t rr - 246 370 ns reverse recovery charge q rr - 248 373 nc v r =300 v, i f =0.09 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =300 v, v gs =10 v, i d =0.09 a, r g =6 v dd =400 v, i d =0.09 a, v gs =0 to 10 v rev. 1.23 page 3 2011-03-08
bss225 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 20 s 100 s 1 ms dc 1000 ms 10 0 10 -1 10 -3 1 10 100 1000 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 3 10 2 10 1 10 0 10 -1 t p [s] z thja [k/w] 0 0.25 0.5 0.75 1 0 40 80 120 160 t a [c] p tot [w] 0 0.02 0.04 0.06 0.08 0.1 0 40 80 120 160 t a [c] i d [a] rev. 1.23 page 4 2011-03-08
bss225 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 2.6 v 3 v 3.2 v 3.6 v 3.8 v 4 v 5 v 10 v 20 22 24 26 28 30 32 34 36 38 40 0 0.1 0.2 0.3 0.4 i d [a] r ds(on) [ ] 0 0.1 0.2 0.3 01234 v gs [v] i d [a] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00 0.10 0.20 0.30 i d [a] g fs [s] v 2.6 v 3 v 3.2 v 3.6 v 3.8 v 4 v 5 v 10 0 0.05 0.1 0.15 0.2 0.25 0.3 012345678910 v ds [v] i d [a] rev. 1.23 page 5 2011-03-08
bss225 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.1 a; v gs =10 v v gs(th) =f( t j ); v ds =v gs ; i d =94 a parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ %98 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -60 -20 20 60 100 140 t j [c] r ds(on) [ ] typ %98 %2 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 t j [c] v gs(th) [v] ciss coss crss 10 3 10 2 10 1 10 0 0 1020304050 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 10 0 10 -1 10 -2 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v sd [v] i f [a] rev. 1.23 page 6 2011-03-08
bss225 13 typ. gate charge 14 drain-source breakdown voltage v gs =f( q gate ); i d =0.1 a pulsed v br(dss) =f( t j ); i d =250 a parameter: v dd 500 520 540 560 580 600 620 640 660 680 700 -60 -20 20 60 100 140 t j [c] v br(dss) [v] 120 v 300 v 480 v 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 q gate [nc] v gs [v] rev. 1.23 page 7 2011-03-08
bss225 package outline: footprint: packaging: dimensions in mm note: due to small size of the package, creeping currents between leads external to the package can occur in the application. extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. values given in this document are only valid for 0 hour lifetime, if no suitable external protection is applied. rev. 1.23 page 8 2011-03-08
bss225 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.23 page 9 2011-03-08
|
